Stabilization of semiconductor surfaces through bulk dopants
نویسندگان
چکیده
منابع مشابه
Stabilization of semiconductor surfaces through bulk dopants
We show by employing density-functional theory calculations (including a hybrid functional) that ZnO surfaces can be stabilized by bulk dopants. As an example, we study the bulk-terminated ZnO (0001̄) surface covered with half a monolayer of hydrogen. We demonstrate that deviations from this half-monolayer coverage can be stabilized by electrons or holes from bulk dopants. The electron chemical ...
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ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2013
ISSN: 1367-2630
DOI: 10.1088/1367-2630/15/8/083009